
Toshiba Corporation has announced the introduction of 16 GB (2 GB) and 8 GB NAND flash memory, fabricated with cutting-edge 56-nanometer process technology co-developed with SanDisk Corporation of Milpitas, California (USA). The 16 GB is the highest density single-chip NAND flash memory yet achieved.
Advancing from limited production of engineering samples at the end of 2006, Toshiba is now increasing shipments of commercial samples of new 8Gb single-chip, multi-level cell (MLC) NAND flash memories, the current mainstream density, with availability from today. Toshiba intends to start shipping commercial samples of 16 GB NAND flash memories in the late first quarter of this year.
Key Specifications
• Memory Size: 8 & 16 Gigabits
• Power Supply: Vcc=2.7-3.6V
• Page Size: 4096+218 bytes
• Programming Time: 800 microseconds per page typical
• Package: 48-pin TSOP Type I
• Exterior Dimensions: 12 x 20 x 1.2 mm